Log-In | Sign-Up Now! It's Free! | Subscriber Services

 

Free Webinars

A Systems Mentality Drives Next Generation MMIC Design
September 14, 2010; 11am ET
Register Here

Presented by:

Innovations in EDA: Discrete Oscillator Design
September 16, 2010; 1 pm ET
Register Here

In Partnership with:

Passive Component Technology
September 21, 2010; 11am ET
Register Here

In Partnership with:

Advertisement

September 2009 Issue: Technical Feature

A Highly Miniaturized Active 90° Power Combiner MMIC Employing CE and CC Circuits

In this work, a highly miniaturized active 90° power combiner, employing InGaP/GaAs heterojuntion bipolar transistors (HBT), was fabricated on a GaAs substrate for MMIC applications. A novel composite structure employing common-emitter (CE) and common-collector (CC) circuits is proposed for 90° power combining. The size of the active 90° power combiner is approximately 2.2 percent of a conventional passive combiner. The active 90° power combiner showed good RF performance, comparable to a passive combiner at S-band. This work is the first 90° power combiner reported employing active devices.

A 90° power combiner has been used for signal mixing at the intermediate frequency (IF) output port of an image rejection mixer.1,2 Until now, a passive branch-line coupler was mainly employed for 90° power combining.1,3 However, the passive branch-line coupler occupies a very large circuit area.


For example, if the branch-line coupler is fabricated on a GaAs substrate with a thickness of 100 µm, for a signal mixing with an IF of 2.4 GHz, the size will be approximately 10.92 × 10.54 mm. Therefore, passive power combiners cannot be integrated on MMICs due to their very large size.4 To reduce the size of the 90° power combiner,6 it has to be fabricated using an active device. However, no study of a 90° power combiner employing an active device has been reported yet. In this work, for integration of the 90° power combiner on a MMIC, a highly miniaturized active 90° power combiner employing CE and CC circuits with InGaP/GaAs heterojunction bipolar transistors (HBT) is proposed.

Design of An Active 90° Power Combiner Employing CE and CC with InGaP/GaAs HBT

Figure 1 Schematic of the active 90° power combiner.

Figure 1 shows the schematic circuit of an active 90° power combiner employing CE and CC circuits. As shown, a novel composite structure employing common-emitter (CE) and common-collector (CC) circuits was used, with the output ports of the CE and CC circuits connected to each other. To compensate for the insertion loss of the active 90° power combiner, an amplifier was added at the output port.


     

Interested in reading the complete article?
A complete view is available to registered MWJournal.com members.

Registration is FREE! Click here to register.

Already registered? Login >>

Already a member, but don't remember your username and/or password? Click here.

If you are a Microwave Journal monthly subscriber and would like to enable FREE Website access, please click here.

Join Microwave Journal on:

Bookmark and Share

Free Microwave Journal
Subcription

Related articles:

electronica 2010: The Entire Electronics Industry Under One Roof -- August 31, 2010
electronica 2010, which will be held at the New Munich Trade Fair Center from 9 to 12 November, will cover technologies, products and applications across the whole spectrum of the electronics industry from semiconductors and EMech components, test instruments and wireless systems, to embedded devices, PCB related services, optoelectronics and power sources. Automotive electronics, displays and e-signage or digital signage, embedded systems, medical electronics, MEMS, photovoltaics and renewable energies are just some of the topics that will be featured.

RFM Announces Investment by Murata -- August 24, 2010
RF Monolithics Inc. (RFM) announced that Murata Electronics North America Inc. has purchased 533,000 shares of RFM Common Stock at $1.31/share, representing a small premium over RFM’s recent 30 day volume weighted average price, in a private transaction. The purchase represents less than five percent of RFM’s outstanding stock.

Skyworks Supports Samsung’s Newest Femtocell Offering -- August 12, 2010
b>Skyworks Solutions Inc. announced that Samsung is leveraging several of its solutions for its newest femtocell offering, including Verizon’s Wireless Network Extender.



Global Maritime Satellite Communications Market Passes $1 B -- September 2, 2010

Cree Demonstrates 150-mm Silicon Carbide Substrates -- September 2, 2010

The Defence/Security Executive Forum at EuMW 2010 -- September 2, 2010

WIN and Presto Engineering Announce Strategic Collaboration -- September 2, 2010

Agilent Launches Measurement Applications, Expands LTE Leadership -- September 2, 2010

Other Horizon House Sites:

Microwave Journal Online: Home | Current Issue | News | Buyer's Guide | Events | Resources | Archives | Subscriptions | Privacy Policy

Advertiser Information:
2010 Media Planner

Find out why more companies advertise in Microwave Journal than any other publication in the industry.

Read More >>

Microwave Journal
Editorial Information

Editorial Planning Guide and Information for Authors

Read More >>


©2009 Microwave Journal & Horizon House Publications ® All rights reserved.